PART |
Description |
Maker |
EGP10GT50A EGP10JT50A EGP10KT50R EGP10D EGP10B |
Fast Rectifiers (Glass Passivated) 1 A, 800 V, SILICON, SIGNAL DIODE, DO-41 1 A, 600 V, SILICON, SIGNAL DIODE, DO-41 1 A, 400 V, SILICON, SIGNAL DIODE, DO-41
|
FAIRCHILD SEMICONDUCTOR CORP
|
1F4-B |
1 A, 400 V, SILICON, SIGNAL DIODE
|
RECTRON LTD
|
ERA38-04 |
0.5 A, 400 V, SILICON, SIGNAL DIODE
|
FUJI ELECTRIC CO LTD
|
DAF814A |
0.6 A, 400 V, 8 ELEMENT, SILICON, SIGNAL DIODE
|
SEMIKRON INTERNATIONAL
|
DSK10E DSK10E-BT |
1 A, 400 V, SILICON, SIGNAL DIODE 1.0A Power Rectifier
|
Sanyo Semicon Device
|
1N4944GP/4G |
1 A, 400 V, SILICON, SIGNAL DIODE, DO-204AL PLASTIC, DO-41, 2 PIN
|
Vishay Beyschlag
|
SF2-W SF4-HF-W |
1 A, 100 V, SILICON, SIGNAL DIODE 1 A, 400 V, SILICON, SIGNAL DIODE
|
RECTRON LTD
|
1N6662US 1N6663US 1N6661US JAN1N6662US JANTXV1N666 |
VOIDLESS-HERMETICALLY-SEALED STANDARD RECOVERY GLASS RECTIFIERS Signal or Computer Diode; Package: A_SQ._MELF; IO (A): 0.5; IFSM (A): 5; Cj (pF): 20; Vrwm (V): 400; VF (V): 1; IR (µA): 0.05; 0.5 A, SILICON, SIGNAL DIODE, DO-35 Signal or Computer Diode; Package: A_SQ._MELF; IO (A): 0.5; IFSM (A): 5; Cj (pF): 20; Vrwm (V): 225; VF (V): 1; IR (µA): 0.05; 0.5 A, SILICON, SIGNAL DIODE, DO-35
|
Microsemi Corporation Microsemi, Corp.
|
RL205M12 1N5395M12 1A6-J RL1N4001-N RECTRONLTD-1A1 |
2 A, 600 V, SILICON, RECTIFIER DIODE, DO-15 1.5 A, 400 V, SILICON, RECTIFIER DIODE, DO-15 1 A, 800 V, SILICON, SIGNAL DIODE 1 A, 50 V, SILICON, SIGNAL DIODE 2.5 A, 100 V, SILICON, RECTIFIER DIODE
|
RECTRON LTD
|
JANTXVSSM1100HE JANTXSSM340S3 |
0.75 A, 1000 V, SILICON, SIGNAL DIODE 3 A, 400 V, SILICON, RECTIFIER DIODE
|
SENSITRON SEMICONDUCTOR
|
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